A New Model for the Determination of Point Defect Equilibrium Concentrations in Silicon

In this paper the boundary conditions for point defect distributions in monocrystalline silicon are investigated. These boundary conditions are established by simple thermodynamic considerations. A circle process is used including vacancy, interstitial and Frenkel pair generation which yields a simple relationship between the vacancy and interstitial equilibrium concentrations at the surface. A new OED model is also presented which explains the t1/ 4 behaviour of the interstitial supersaturation. This model is used to simulate experiments of Mizuo and Higuchi. In this way values for the equilibrium concentrations and the diffusion coefficients of vacancies and interstitials are obtained.